Hongwei Technology and State Power Investment Nuclear Power Core Strength Create Joint Laboratory

On June 25, 2026, Hongwei Technology and Guodian Invested Subsidiary, Guodian Invest Nuclear Power Co., Ltd., officially signed a strategic cooperation agreement to jointly establish the "Power Semiconductor Ion Implantation Engineering Technology and Device Research Joint Laboratory". Both sides will work together to overcome the industrial application challenges of high-energy ion implantation in power semiconductor devices, enhance the core performance of IGBT, FRD, and other chips, and improve the competitiveness of Hongwei products. This technical cooperation will strengthen Hongwei Technology's product competitiveness in the field of AI data center power supply and distribution.