SK Hynix confirms that V10 NAND flash memory features 375 layers of stacking and introduces wafer bonding technology.

SK Hynix has confirmed in its FMS 2026 summit press release that its new generation flash memory product V10, following the 321-layer V9 "4D NAND," adopts a 375-layer stacked design. This is also SK Hynix's first NAND product that uses wafer bonding technology. SK Hynix claims that the V10 NAND achieves 2.5 times the performance per watt of the previous generation, optimized for AI infrastructure environments that require a balance of energy efficiency and performance.