Samsung unveils its next-generation AI storage roadmap, showcasing zHBM and V10 NAND technology with over 400 layers.

On August 4, local time, Samsung Electronics unveiled its next-generation storage technology roadmap for AI infrastructure at the 2026 Future Memory and Storage Conference held in Santa Clara, USA. For the first time, they showcased the zHBM and zNAND-O concept products and launched the 400-layer V10 BV-NAND utilizing wafer bonding technology. Samsung stated that zHBM is designed to enhance AI training and inference performance by vertically stacking HBM above the AI accelerator, thereby reducing the data transmission distance between the processor and memory. The zHBM, equipped with next-generation interface systems, is expected to achieve performance approximately 8 times that of HBM5, while leveraging new wafer bonding technology to attain over 10 times the memory density compared to HBM5, as well as improved energy efficiency. In the NAND sector, Samsung introduced the V10 BV-NAND architecture for the first time, stacking memory cells using wafer bonding technology to exceed 400 layers, which represents an approximate 58% increase in memory density compared to the previous generation V9 product, while also improving read, write, and input-output performance.