Osican achieved a breakthrough in the key technology of buried vias in the ultra-high-density interconnect PCB.

In response to the continuous upgrade demand for high-performance hardware in applications such as high-end AI servers and core switches, Oshkosh has successfully developed N+M structure, three-material hybrid buried capacitance ultra-high layer PCB. This breakthrough in high-reliability mass production technology provides technical support for stable manufacturing and reliable delivery of high-end PCBs. The product adopts ultra-high layer N+M structure, integrating buried capacitance materials, high-speed materials, and ordinary high Tg materials. It achieves comprehensive breakthroughs in areas such as ultra-thick boards, micro holes, high thickness-to-diameter ratios, high-density interconnects, and strict impedance control.