The first PECVD SiCN equipment in Shanghai has been successfully off the assembly line.

On April 27th, SPM Shanghai announced that its first plasma-enhanced chemical vapor deposition of carbon nitride silicon equipment has officially come off the assembly line. This equipment is designed to support the PECVD NDC process in the back-end metal interconnect process application of 55nm and below high-end IC technology. Application scenarios include copper oxidation inhibition, copper diffusion barrier layer, and etch stop layer.