Korean media: Samsung and Nvidia accelerate research and development of the next generation NAND flash memory.

According to South Korea's "Seoul Economic Daily," Samsung Electronics is currently collaborating with NVIDIA to accelerate the research and development of the next-generation NAND flash memory chips. A joint research team consisting of Samsung Semiconductor Research Institute, NVIDIA, and Georgia Institute of Technology has developed a "physical information neural network operator" model, which analyzes the performance of ferroelectric-based NAND flash memory devices at a speed more than 10,000 times faster than existing models and has published their research results. Based on these research findings, Samsung is collaborating with NVIDIA to develop and commercialize ferroelectric NAND flash memory.